Silicon Power Schottky Diode
Features • High Surge Capability • Types up to 100 V VRRM
MBRF20045 thru MBRF200100R
VRRM ...
Silicon Power
Schottky Diode
Features High Surge Capability Types up to 100 V VRRM
MBRF20045 thru MBRF200100R
VRRM = 20 V - 100 V IF = 200 A
TO-244AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF20045 (R) MBRF20060 (R) MBRF20080 (R)MBRF200100 (R) Unit
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage
VRRM
VRMS VDC
45 60 80 100 V
32 42 56 70 V 45 60 80 100 V
Continuous forward current
IF
TC ≤ 140 °C
200
200
200
200 A
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
Tj Tstg
1500
-40 to 175 -40 to 175
1500
-40 to 175 -40 to 175
1500
-40 to 175 -40 to 175
1500
-40 to 175 -40 to 175
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF20045 (R) MBRF20060 (R) MBRF20080 (R)MBRF200100 (R) Unit
Diode forward vol...
