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GB10MPS17-247

GeneSiC

Silicon Carbide Schottky Diode


Description
GB10MPS17-247 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit QC/IF Low Thermal Resistance 175 °C Maximum Operating Temperature Temperature Independent Switching Behavior Positive Temperature Coefficient of VF Extremely Fast S...



GeneSiC

GB10MPS17-247

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