N-channel SiC power MOSFET
SCT2080KE
N-channel SiC power MOSFET
VDSS RDS(on) (Typ.)
ID
1200V 80mΩ 40A
lOutline
TO-247 TO-247N
Datasheet
lFeatu...
Description
SCT2080KE
N-channel SiC power MOSFET
VDSS RDS(on) (Typ.)
ID
1200V 80mΩ 40A
lOutline
TO-247 TO-247N
Datasheet
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant
lApplication ・Solar inverters ・DC/DC converters ・Induction heating ・Motor drives
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge ˂ 300nsec)
Total power dissipation
TC=25°C, See Fig.1 TC=100°C, See Fig.1
Junction temperature
Range of storage temperature
lInner circuit
(1) Gate (2) Drain (3) Source
* Body Diode
lPackaging specifications*1 Package
Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking
TO-247 TO-247N
Tube 30
C C11 SCT2080KE
Symbol VDSS ID *2 ID *2
ID,pulse *3 VGSS
VGSS_surge*4
PD
Tj Tstg
Value 1200
40 28 80 -6 to +22 -10 to +26 262 130 175 -55 to +175
Unit V A A A V V W W °C °C
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TSQ50210-SCT2080KE 28.Mar.2019 - rev.004
SCT2080KE
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Unit
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-V
Zero gate voltage drain current
Gate - Source leakage current Gate - Source leakage current Gate th...
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