Freescale Semiconductor Technical Data
Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with thi...
Freescale Semiconductor Technical Data
Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part.
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
Typical Two - Tone Performance
125 mA, Power
PGoauitn=—101W8 daBtts
PEP
@
960
MHz,
VDD
=
28
Volts,
IDQ
=
Drain Efficiency — 32%
IMD — - 37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip RF Feedback for Broadband Stability Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 200°C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
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