SPN9926B
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN9926B is the Dual N-Channel logic enhancement mode power ...
SPN9926B
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN9926B is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V 20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
PIN CONFIGURATION(SOP–8)
PART MARKING
2020/03/05 Ver.3
Page 1
SPN9926B
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1
ORDERING INFORMATION
Part Number
Package
SPN9926BS8RGB
SOP-8
※ SPN9926BS8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperatu...