MDV10N1K1U

MDV10N1K1 – Single N-Channel Trench MOSFET 100V MDV10N1K1 Single N-channel Trench MOSFET 100V, 12.3A, 110mΩ ㄹ General Description The MDV10N1K1 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV10N1K1 is suitable device for DC to DC converter, Load Switch and general purpose applications. Features  VDS = 100V  ID = 12.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 116mΩ @VGS = 6.0V  100% UIL Tested DD DD DD DD D S SSG GS SS PDFN33 G S Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3) Junction and Storage Temperature Range TC=25oC TC=70oC TC=25oC TC=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Symbol VDSS VGSS ID ID...