SPN7575

SPN7575 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7575 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. This device is particularly suited for E Bike application. APPLICATIONS  DC/DC Converter  Load Switch  Power Tool FEATURES  75V/80A, RDS(ON)=12mΩ@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L package design PIN CONFIGURATION( TO-220-3L ) PART MARKING 2020/05/13 Ver.2 Page 1 SPN7575 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN7575T220TGB TO-220-3L ※ SPN7575T220TGB : Tube ; Pb – Free ; Halogen - Free Part Marking SPN7575 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Current Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 500uH , IAS = 20A , VDD = 60V. ) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IAS PD EAS TJ TSTG RθJC Typical 75 ±20 90 80 370 52 200 140 165 -55/150 -55/150 0.75 Unit V V A A A W mJ ℃ ℃ ℃/W 2020/05/13 Ver.2 Page 2...