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RD100HHF1C

Part Number	RD100HHF1C
Manufacturer	Mitsubishi
Description	Silicon RF Power MOS FET
Features	High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 17.0± 0.5 4-C2 1 ...
Published	Apr 16, 2019
Datasheet	RD100HHF1C PDF File

Features

High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6 ± 0.15 3.3± 0.2 APPLICATION For output stage of high power amplifiers in HF Ba...

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