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MGF4841CL

Mitsubishi

Power GaAs HEMT


Description
< Power GaAs HEMT > MGF4841CL Micro-X type plastic package DESCRIPTION The MGF4841CL power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4841CL is designed for automotive application and AEC-Q101 qualified. Outline Drawing FEATURES High gain and High Pout,sat Glp=8.5dB, Pout,sat=11.5dBm (Typ.) @ f=24.3GHz ...



Mitsubishi

MGF4841CL

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