STP2301

STP2301 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D GS 12 FEATURE -20V/-2.8A, RDS(ON) = 90m-ohm (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 110m-ohm @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 S01YA 12 Y: Year Code A: Process Code 1 STP2301 2007. V1 86-755-83468588 86-755-83755599 STP2301 P Channel Enhancement Mode MOSFET -2.8A...