MJIRF6N70

MJIRF6N70 ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω Major Ratings and Characteristics Characteristics Values Units ID 6.0 A IDM 24 A VDS 700 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER MOSFET Description/ Features The MJIRF6N70 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. ● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant Case Styles Ordering Information Part Number MJIRF6N70 1、 GATE 2、 DRAIN 3、 SOURCE Package TO-251 Packaging Tube 1 of 6 MJIRF6N70 Absolute Maximum Rating (Tamb = 25℃) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Pulsed IDM Total Dissipation PD Junction Temperature...