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SPN8636 Dataheets PDF



Part Number SPN8636
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN8636 DatasheetSPN8636 Datasheet (PDF)

SPN8636 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8636 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8836 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Conver.

  SPN8636   SPN8636


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SPN8636 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8636 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8836 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES  30V/80A,RDS(ON)=6.0mΩ@VGS=10V  30V/80A,RDS(ON)=9.0mΩ@VGS=4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x3-8L package design PIN CONFIGURATION PPAK3x3-8L PART MARKING 2020/05/28 Ver 2 Page 1 SPN8636 N-Channel Enhancement Mode MOSFET PPAK3x3-8L PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8636DN8RGB PPAK3x3-8L ※ SPN8636DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case TC=25℃ TC=100℃ TC=25℃ Part Marking SPN8636 Symbol VDSS VGSS ID IDM IAS EAS PD TJ TSTG RθJC Typical 30 ±20 80 57 160 50 180 83 150 -55/150 1.5 Unit V V A A A mJ W ℃ ℃ ℃/W 2020/05/28 Ver 2 Page 2 SPN8636 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=24V,VGS=0V IDSS VDS=24V,VGS=0V, TJ=55℃ ID(on) VDS≥5V,VGS=10V RDS(on) VGS=10V,ID=20A VGS=4.5V,ID=10A gfs VDS=5V,ID=30A VSD IS=1A,VGS=0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=15V,VGS=4.5V ID=15A VDS=15VGS=0V f=1MHz VDD=15V, ID=15A,VGEN=10V RG=3.3Ω Min. 30 1.0 Typ Max. Unit V 2.5 ±100 nA 1 uA 5 80 A 4.7 6.5 6.0 9.0 mΩ 22 S 1V 20 18 7.6 nC 7.2 2300 265 pF 210 7.8 15 15 12 nS 37 30 10.6 15 2020/05/28 Ver 2 Page 3 SPN8636 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 Transfer Characteristics Fig. 3 On-Resistance vs Gate voltage Fig. 4 Gate Charge Characteristics Fig. 5 On-Resistance vs Junction Temp 2020/05/28 Ver 2 Fig. 6 Vgs vs Junction Temperature Page 4 SPN8636 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Typical Capacitance Characteristics Fig. 8 Maximum Safe Operation Area Fig. 9 Effective Transient Thermal Impedance Fig. 10 Switching Time Waveform 2020/05/28 Ver 2 Fig. 11 Unclamped Inductive Waveform Page 5 SPN8636 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/05/28 Ver 2 Page 6 .


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