HG Semiconductors
MRF448HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Designed primarily for hig...
HG Semiconductors
MRF448HG RF POWER
TRANSISTOR
ROHS Compliance,Silicon
NPN POWER
TRANSISTOR
Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
ω Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Efficiency = 45%
ω Intermodulation Distortion @ 250 W (PEP) — IMD = – 30 dB (Max)
ω 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
MAXIMUM RATINGS Rating
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 255C (1)
Derate above 255C Storage Temperature Range THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 255C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
V(BR)CEO
Collector...