MRF455

H GSemiconductors HG RF POWER TRANSISTOR MRF455 ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION The MRF455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions. FEATURES Specified 12.5V, 30MHz Characteristics PO = 70W GP = 13 dB min. at 70 W/30 MHz Omnigold™ Metalization System DIMENSIONS D A F qC U1 B H 4 α L 3 w2 M C b A 1.Collector 2.EMITTER 3.BASE 4.EMITTER 5.FIN c 1 H p U2 5 w1 M A B 2 U3 Q NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE. UNIT A b c D D1 F HL p Q q U1 mm 7.47 6.37 inches 0.294 0.251 5.82 5.56 0.229 0.219 0.18 0.10 0.007 0.004 9.73 9.47 0.383 0.373 9.63 9.42 0.397 0.371 2.72 2.31 0.107 0.091 20.71 19.93 0.815 0.785 5.61 5.16 0.221 0.203 3.33 3.04 0.131 0.120 4.63 4.11 0.182 0.162 18.42 0.725 25.15 24.38 0.99 0.96...