BTB4511J3

CYStech Electronics Corp. Spec. No. : C662J3 Issued Date : 2010.10.26 Revised Date : 2010.12.08 Page No. : 1/6 PNP Epitaxial Planar High Current (High Performance) Transistor BTB4511J3 Features 5 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 10 Amps Extremely low equivalent on resistance, RCE(SAT)=70mΩ at 4A Pb-free lead plating package Symbol BTB4511J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation @TA=25°C Power Dissipation @TC=25°C Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB PD Tj ; Tstg Limits -140 -100 -6 -5 -10 -1 1.5 20 -55 ~ +150 Unit V V V A A A W W °C BTB4511J3 CYStek Product Specification CYStech Electronics Corp. Spec. ...