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HGB059N12SL
120V N-Ch Power MOSFET
Description
HGB059N12SL, HGP059N12SL P-1 Feature ◇ High Speed Power Smooth Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free 120V N-Ch Power MOSFET VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited) ID (Package Limited) 120 4.7 5.3 160 120 V mΩ mΩ A A Applicatio...
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