HGN095NE4SL

HGN095NE4SL Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial P-1 45V N-Ch Power MOSFET VDS 45 V RDS(on),typ VGS=10V 6.7 mΩ RDS(on),typ VGS=4.5V 9.3 mΩ ID (Sillicon Limited) 52 A ID (Package Limited) 30 A DFN5x6 Drain Gate Part Number HGN095NE4SL Package Marking DFN5*6 GN095NE4SL Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ TC=25℃ - L=0.4mH, TC=25℃ TC=25℃ - Pin...