HGK037N10S

HGB037N10S , HGP037N10S Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control HGK037N10S P-1 100V N-Ch Power MOSFET VDS RDS(on),typ TO-263 RDS(on),typ TO-247 RDS(on),typ TO-220 ID (Sillicon Limited) ID (Package Limited) 100 2.8 3 3.1 190 120 V mΩ mΩ mΩ A A TO-263 TO-220 Drain Pin2 Gate Pin 1 Part Number HGB037N10S HGK037N10S HGP037N10S Package Marking TO-263 GB037N10S TO-263 GK037N10S TO-220 GP037N10S TO-247 Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and...