100V N-Ch Power MOSFET
HGP082N10M
Feature ◇ Optimized for high speed smooth switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalan...
Description
HGP082N10M
Feature ◇ Optimized for high speed smooth switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
Part Number HGP082N10M
Package Marking TO-220 GP082N10M
P-1
100V N-Ch Power MOSFET
VDS RDS(on),typ RDS(on),max ID
100 V
6.4 mΩ 8.2 mΩ 100 A
TO-220
Drain Pin2
Gate Pin 1
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ -
L=0.5mH, TC=25℃ TC=25℃ -
Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient
Symbol RƟJC RƟJA
...
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