HGB020NE4S

HGB020NE4S , HGK020NE4S P-1 HGP020NE4S 45V N-Ch Power MOSFET Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested VDS RDS(on),typ RDS(on),typ RDS(on),typ 45 V TO-263 1.55 mΩ TO-247 1.75 mΩ TO-220 1.75 mΩ ◇ Lead Free Application ID (Sillicon Limited) ID (Package Limited) 288 A 120 A ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools TO-263 TO-220 Drain Pin2 ◇ UPS ◇ Motor Control Gate Pin 1 Part Number HGB020NE4S HGK020NE4S HGP020NE4S Package Marking TO-263 GB020NE4S TO-247 GK020NE4S TO-220 GP020NE4S TO-247 Src Pin3 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Op...