F59L2G81LA-25TG

ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us (Typ.) - Block Erase time: 3ms (Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L2G81LA 2 Gbit (256M x 8) 3.3V NAND Flash Memory Reliable CMOS Floating Gate Technology - ECC Requirement: 1bit/528Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Command Register Operation Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download NOP: 4 cycles Cache Program Operation for High Performance Program Cache Read Operation Copy-Back Operation - EDO mode - O...