F59L4G81CA-25BG2L

ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read  Mode control – Serial input/output – Command control  Number of valid blocks – Min 2008 blocks – Max 2048 blocks F59L4G81CA (2L) 4 Gbit (512M x 8) 3.3V NAND Flash Memory  Power supply VCC = 2.7V to 3.6V  Access time – Cell array to register 25 μs max – Serial Read Cycle 25 ns min (CL=50pF)  Program/Erase time – Auto Page Program 300 μs/page typ. – Auto Block Erase 2.5 ms/block typ.  Operating current – Read (25 ns cycle) 30 mA max. – Program (avg.) 30 mA max – Erase (avg.) 30 mA max – Standby 50 μA max  8 bit ECC for each 512Byte is required. ORDERING INFORMATION Product ID Speed Package F59L4G81CA -25TG2L 25 ns F59L4G81CA...