F59L1G81MB-25TG2M

ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 4ms - typical  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MB (2M) 1 Gbit (128M x 8) 3.3V NAND Flash Memory  Reliable CMOS Floating Gate Technology - ECC Requirement: - 4bit/528Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years  Command Register Operation  Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download  NOP: 4 cycles  Cache Program Operation for High Performance Program  Cache Read Operation  Copy-Back Operation  EDO mode  OTP Operation  Bad-Block-Protect  Operating temperature - Commercial: 0°C to +70°C ORDERING INFORMATION Product ID Speed F59L1G81MB -25TG2M F59L1G81MB-25BUG2M F59L1G81MB -25BG2M F59L1G81MB -25BCG2M 25 ns 25 ns 25 ns 25 ns Package 48 pin TSOPI 48 ball BGA 63 ball BGA 67 ball BGA Comments Pb-free Pb-free Pb-free Pb-free GENERAL DESCRIPTION The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. It...