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F59L1G81LB-25TG2M Dataheets PDF



Part Number F59L1G81LB-25TG2M
Manufacturers ESMT
Logo ESMT
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet F59L1G81LB-25TG2M DatasheetF59L1G81LB-25TG2M Datasheet (PDF)

ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 400us - typical - Block Erase time: 4ms - typical  Command/Address/Data Multi.

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Document
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 400us - typical - Block Erase time: 4ms - typical  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81LB (2M) 1 Gbit (128M x 8) 3.3V NAND Flash Memory  Reliable CMOS Floating Gate Technology - ECC Requirement: - 1bit/528Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years  Command Register Operation  Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download  NOP: 4 cycles  Cache Program Operation for High Perform.


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