Document
SFTN3910R
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
Peak Drain Current 1) Avalanche energy,single pulse 2) Avalanche current, single pulse 2) Power Dissipation Operating Junction Temperature Range Storage Temperature Range
TC = 25℃ TC = 100℃
TC = 25℃
Symbol VDS VGS
ID
IDM EAS IAS PD TJ Tstg
Value 30 ±20 45 28 180 13 16 33
- 55 to 150
- 55 to 150
Unit V V
A
A mJ A W ℃ ℃
Thermal Characteristics
Parameter
Thermal Resistance from Juntion to Ambient
Thermal Resistance from Juntion to Case
1) Repetitive Rating : Pulsed width limited by maximum junction temperature. 2) VDD=25V, VGS=10V, L=0.1mH, IAS=16A,RG=25Ω, Starting TJ=25°C.
Symbol RθJA RθJC
Max. 62 3.8
Unit ℃/W ℃/W
Winning Team
Dated: 07/12/2017 PT
SFTN3910R
Characteristics at TJ = 25℃ unless otherwise specified
Parameter
Symbol
Drain-S.