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SFTN3910R Dataheets PDF



Part Number SFTN3910R
Manufacturers Winning Team
Logo Winning Team
Description N-Channel MOSFET
Datasheet SFTN3910R DatasheetSFTN3910R Datasheet (PDF)

SFTN3910R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current 1) Avalanche energy,single pulse 2) Avalanche current, single pulse 2) Power Dissipation Operating Junction Temperature Range Storage Temperature Range TC = 25℃ TC = 100℃ TC = 25℃ Symbol VDS VGS ID IDM EAS IAS PD TJ Tstg Value 30 ±20 45 28 180 13 16 33 - 55 to 150 - 55 to 1.

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SFTN3910R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current 1) Avalanche energy,single pulse 2) Avalanche current, single pulse 2) Power Dissipation Operating Junction Temperature Range Storage Temperature Range TC = 25℃ TC = 100℃ TC = 25℃ Symbol VDS VGS ID IDM EAS IAS PD TJ Tstg Value 30 ±20 45 28 180 13 16 33 - 55 to 150 - 55 to 150 Unit V V A A mJ A W ℃ ℃ Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient Thermal Resistance from Juntion to Case 1) Repetitive Rating : Pulsed width limited by maximum junction temperature. 2) VDD=25V, VGS=10V, L=0.1mH, IAS=16A,RG=25Ω, Starting TJ=25°C. Symbol RθJA RθJC Max. 62 3.8 Unit ℃/W ℃/W Winning Team Dated: 07/12/2017 PT SFTN3910R Characteristics at TJ = 25℃ unless otherwise specified Parameter Symbol Drain-S.


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