N-Channel MOSFET
SFTN60R
N-Channel Enhancement Mode MOSFET
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Drain
Gate
Absolute Maximum ...
Description
SFTN60R
N-Channel Enhancement Mode MOSFET
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Drain
Gate
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Peak Drain Current
TC = 25℃ TC = 100℃
Power Dissipation
TC = 25℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD TJ, Tstg
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol RθJC RθJA
Source
Value 600 ± 30
1.9 1.2 7.6 42 - 55 to + 150
Unit V V
A
A W ℃
Max. 2.98 110
Unit ℃/W ℃/W
Winning Team
Dated: 16/03/2016 Rev: 01
SFTN60R
Characteristics at Ta = 25℃
Parameter
Drain-Source Breakdown Voltage at ID = 250 µA
Drain-Source Leakage Current at VDS = 600 V Gate Leakage Current at VGS = ± 30 V
Gate-Source Threshold Voltage at VDS = VGS, ID = 250 uA
Drain-Source On-State Resistance at VGS = 10 V, ID = 0.95 A
Forward Transconductance at VDS = 30...
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