SFTN6011

SFTN6011 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220FB Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Gate-Source Voltage Drain Current Peak Drain Current TC = 25℃ TC = 100℃ Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Range Symbol VGS ID IDM Ptot TJ, Tstg Value ± 20 11 7 22 125 - 55 to + 150 Unit V A A W ℃ Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Max. 1 62 Unit ℃/W ℃/W Winning Team Dated: 03/05/2017 SFTN6011 Characteristics at TC = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 0.25 mA Drain-Source Leakage Current at VDS = 600 V, TJ = 25℃ TJ = 150℃ Gate Leakage Current at VGS = ± 20 V Gate-Source Threshold Voltage at VDS = VGS, ID = 500 μA Drain-Source On-State Resistance at VGS = 10 V, ID = 7 A Input Capacitance...