N-Channel MOSFET
SFTN5038R
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolu...
Description
SFTN5038R
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current
Pulsed Drain Current
TC = 25℃ TC = 100℃
Power Dissipation Avalanche energy,single pulse
TC = 25℃
Maximum Thermal Resistance from Juntion to Case
Maximum Thermal Resistance from Juntion to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol VDS VGS
ID
IDM PD EAS RθJC RθJA TJ Tstg
Value
500
± 30 11 6.95 33 83 220 1.5 62.5 150 - 55 to + 150
Unit V V
A
A W mJ ℃/W ℃/W ℃ ℃
Winning Team
Dated: 19/01/2018
SFTN5038R
Characteristics at Ta = 25℃ unless otherwise specified
Parameter
Symbol
Drain-Source Breakdown Voltage at ID = 250 µA
Drain-Source Leakage Current at VDS = 500 V
Gate Leakage Current at VGS = ± 30 V
Gate-Source Threshold Voltage at VDS = VGS, ID = 250 µA
Drain-Source On-State Resistance at VGS = 10 V, ID ...
Similar Datasheet