SFTN2906

SFTN2906 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current at VGS = 10 V TC = 25℃ TC = 100℃ Peak Drain Current TC = 25℃ Power Dissipation Single Pulse Avalanche energy at ID = 84 A , RGS = 25 Ω TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM Ptot EAS TJ, Tstg Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Symbol RθJC Value 60 ± 20 84 59 336 38 140 - 55 to + 150 Max. 3.9 Unit V V A A W mJ ℃ Unit K/W Winning Team Dated: 24/11/2017 SFTN2906 Characteristics at TJ = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 1 mA Drain-Source Leakage Current at VDS = 60 V at VDS = 60 V, TJ = 125℃ Gate Leakage Current at VGS = 20 V Gate-Source Threshold Voltage at VDS = VGS, ID = 75 µA Drain-Source On-State Resi...