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SFTN0825R

Winning Team
Part Number SFTN0825R
Manufacturer Winning Team
Description N-Channel MOSFET
Published Apr 1, 2019
Detailed Description SFTN0825R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolu...
Datasheet PDF File SFTN0825R PDF File

SFTN0825R
SFTN0825R


Overview
SFTN0825R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.
Gate 2.
Drain 3.
Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current TC = 25℃ TC = 100℃ Avalanche energy,single pulse 1) Avalanche current, single pulse 2) Power Dissipation TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM EAS IAS PD TJ,Tstg Value 250 ±30 8 5 16 132 2.
1 78 - 50 to 150 Unit V V A A mJ A W ℃ Thermal Characteristics Parameter Symbol Max.
Thermal Resistance from Juntion to Ambient 3) RθJA 55 Thermal Resistance from Juntion to Case RθJC 1) L= 60mH, IAS=2.
1A, VDD=150V, RG=10Ω, ...



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