SFTN3005R

SFTN3005R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Peak Drain Current Avalanche Current, L = 0.1 mH Avalanche Energy, L = 0.1 mH Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range TA = 25℃ TA = 70℃ TC = 25℃ TC = 70℃ TA = 25℃ TC = 25℃ Symbol VDS VGS ID ID IDM IAR EAS PD PD TJ,Tstg Value 30 ± 20 11.8 9.5 48 38 120 15 11.25 2 32.9 - 55 to 150 Unit V V A A A A mJ W W ℃ Thermal Characteristics Parameter Symbol Max. Unit Thermal Resistance from Juntion to Ambient 1) RθJA 62 ℃/W Thermal Resistance from Juntion to Case RθJC 3.8 ℃/W 1) RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined...