SFTN3906MP

SFTN3906MP N-Channel Enhancement Mode MOSFET Drain Gate Source 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain DFN3030 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Drain-Gate Voltage Drain Current - Continuous Power Dissipation Drain Current - Pulsed 1) Single Pulse Avalanche Current 2) Single Pulse Avalanche Energy 2) TC = 25℃ TC = 100℃ TC = 25℃ Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case 1) Repetitive Rating : Pulsed width limited by maximum junction temperature. 2) VDD = 25 V, VGS = 10 V, L= 0.1mH, IAS = 42 A, RG = 25 Ω, Starting TJ = 25℃. Symbol VDS VGS ID PD IDM IAS EAS Tj, Tstg Value 30 ± 20 60 38 45 240 42 88 - 55 to + 150 Symbol RθJA RθJC Max. 62 2.8 Unit V V A W A A mJ ℃ Unit ℃/W ℃/W Winning Team Dated: 02/12/2017 PT SFTN3906MP Characteristics at Tj = 25℃ unless ot...