F50L1G41LB

ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. F50L1G41LB (2M) 3.3V 1 Gbit SPI-NAND Flash Memory Values 3.3V x1, x21, x4 104MHz 1-bit 9.6ns 104MT/s 1ms (maximum value) 1ms (maximum value) FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us  Memory Cell: 1bit/Memory Cell  Support SPI-Mode 0 and SPI-Mode 31  Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms  Hardware Data Protection - Program/Erase Lockout During Power Transitions  Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years  Command Register Operation  NOP: 4 cycles  OTP Operation  Bad-Block-Protect  Boot Read Note: 1. Mode 0: CPOL = 0, CPHA = 0; Mode 3: CPOL = 1, CPHA = 1 ORDERING INFORMATION Product ID Speed F50L1G41LB-104YG2M F50L1G41LB-104YG2ME 104MHz 104MHz Package 8-contact WSON 8-contact WSON (without expose metal pad) 8x6mm 8x6mm Comments Pb-free Pb-free Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2022 Revision: 1.6 1/49 E...