F59D1G81MB-45BCG2M

ESMT Flash (Preliminary) FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) x16 -Page Size: (1K + 32) Word (x16) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time x8 - Program time: 300us (Typ.) - Block Erase time: 4ms (Typ.) Command/Address/Data Multiplexed I/O Port F59D1G81MB / F59D1G161MB (2M) 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating Gate Technology - ECC Requirement: x8 - 4bit/512Byte, x16 - 4bit/256Word - Endurance: 100K Program/Erase Cycl...