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MA4E1317 Dataheets PDF



Part Number MA4E1317
Manufacturers MA-COM
Logo MA-COM
Description GaAs Flip Chip Schottky Barrier Diodes
Datasheet MA4E1317 DatasheetMA4E1317 Datasheet (PDF)

MA4Exxxx Series GaAs Flip Chip Schottky Barrier Diodes Features  Low Series Resistance  Low Capacitance  High Cutoff Frequency  Silicon Nitride Passivation  Polyimide Scratch Protection  Designed for Easy Circuit Insertion Description and Applications The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxia.

  MA4E1317   MA4E1317



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MA4Exxxx Series GaAs Flip Chip Schottky Barrier Diodes Features  Low Series Resistance  Low Capacitance  High Cutoff Frequency  Silicon Nitride Passivation  Polyimide Scratch Protection  Designed for Easy Circuit Insertion Description and Applications The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input. Rev. V12 MA4E1317 MA4E1318 MA4E1319 -1 MA4E1319 - 2 Ordering Information Part Number MA4E1317 MA4E1318 MA4E1319-1 MA4E1319-2 MA4E2160 MADS-001317-1278HP MADS-001318-1197HP Package 100 piece Gel Pack 3000 piece Reel MA4E2160 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0006068 MA4Exxxx Series GaAs Flip Chip Schottky Barrier Diodes Electrical Specifications @ +25°C Parameters and Test Conditions Symbol Units Junction Capacitance @ 0 V, 1 MHz CJ pF Total Capacitance @ 0 V, 1 MHz1 CT pF Junction Capacitance Difference Series Resistance @ +10 mA2 DCJ pF RS Ω Forward Voltage @+1 mA VF1 V Forward Voltage Difference @ +1 mA DVF V Reverse Breakdown Voltage @ -10 µA VBR V SSB Noise Figure NF dB Rev. V12 MA4E1317 Min. Typ. Max. - .020 - .030 .045 .060 - - - - 4 7 .60 .70 .80 - - - 4.5 7 - - 6.54 - MA4E1318 Min. - .0303 Typ. .0203 .0453 Max. - .0603 - - - - 4 7 .60 .70 .80 - .005 .010 - - - - 6.54 - Parameters and Test Conditions Symbol Units MA4E1319-1 or -2 Min. Typ. Max. MA4E2160 Min. Typ. Max. Junction Capacitance at 0 V at 1 MHz CJ Total Capacitance at 0 V at 1 MHz1 CT pF - .0203 - - - .0203 pF .0303 .0453 .0603 .0603 .0303 .0453 Junction Capacitance Difference Series Resistance at +10 mA2 DCJ pF RS Ω - .005 .010 .010 - .005 - 4 7 7 - 4 Forward Voltage at .


MASWSS0179 MA4E1317 MA4E1318


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