Document
SFP(B)120N80B
N-MOSFET 80V, 120A, 5.5mΩ
Features
Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and uniformity with hige EAS Fast Switching High Ruggedness
Product Summary
VDS RDS(on)@VGS=10V ID
80V 5.5 mΩ
120A
Application
Power switching application UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications
Part ID
Package Type Marking
SFP120N80B SFB120N80B
TO-220 TO-263
120N80B 120N80B
Maximum Ratings
Parameter
Drain-source voltage Continuous drain current TC = 25°C (Silicon limit)
TC = 100°C (Silicon limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1mH,Rg=25Ω, ID=sweep(14A~46A)) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature
Symbol VDS
Value 80
Unit V
ID ID pulse
120
90 450
A
EAS VGS Ptot Tj , Tstg
1200 ±20 220 -55...+150
mJ V W ℃
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SFP(B)120N80B
Thermal Resistance
Parameter Thermal r.