SFB120N120

Features  Adanced trench process technonlog  Extremely low on-resistance RDS(on)  High Ruggedness  100% Avalance Tested Application  Power Management in inverter System  Synchronous Rectificatiou SFP(B)120N120 N-MOSFET 120V,120A, 8.0mΩ Product Summary VDS RDS(on)@VGS=10V ID 120V 8.0 mΩ 120A Part ID Package Type SFP120N120 TO-220 SFB120N120 TO-263 Marking 120N120 120N120 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 100°C (Package limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=0.033mH,VDS=80V) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Symbol VDS ID ID pulse EAS VGS Ptot Tj , Tstg Value 120 120 90 480 600 ±20 230 -55...+150 Unit V A mJ V W ℃ Thermal Resistance Parameter Thermal resistance, junction – case. Max Thermal resistance, junction – ambient. Max Symbol RthJC RthJA Value 0.55 62.0 U...