SILICON RECTIFIER DIODES
SILICON RECTIFIER DIODES
Diffused silicon diodes in metal envelopes with ceramic insulation, intended for power rectifi...
Description
SILICON RECTIFIER DIODES
Diffused silicon diodes in metal envelopes with ceramic insulation, intended for power rectifier application. The series consists of the following types: Normal polarity (cathode to stud): BYX32-600 to BYX32-1600 Reverse polarity (anode to stud): BYX32-600R to BYX32-1600R
QUICK REFERENCE DATA
Crest working reverse voltage VRWM
Repetitive peak reverse voltage
VRRM
600 800 1000 1200
_B_Y_X_32_--=-60.:...:0:....;,R-+-..:.8~00.:...:R~.....;1..:..0-=-00....:.R..:....j. 1200R
max.
600 800 1000 1200
1600 1600R
1200 v
max.
~60.:...:0~-=-8~00~~1~0~~0~1~2~0~0__~16.:...:0~0 v
Average forward current Non-repetitive peak forward cu rrent
max. max.
150 1600
A A
MECHANICAL DATA
Dimensions in mm
022
- - 'r
insulating tube
-24'5~1~21J -50_ r . . _ - - - - - - - 156 - - - - - -_ _.. 1 7270229
H+):Normal polarity
blue cable. Reverse polarity ( * ) : red cable.
Net mass: 115 9 Diameter of clearance hole: max. 13.0 mm
Torque on nut: min. 10 Nm
(100 kgcm)
max...
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