AM2931-110
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER ...
AM2931-110
RF & MICROWAVE
TRANSISTORS S-BAND RADAR APPLICATIONS
. . . . . . . .
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN
.400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2931-110 BRANDING 2931-110
DESCRIPTION The AM2931-110 is a high power silicon bipolar
NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM2931-110 is supplied in the BIGPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
375 12 48 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.40 °C/W
*Applies only to rated RF amplifier operation
August...