Document
Features
* Fast switching diode in MiniMELF case especially suited for automatic surface mounting.
* Identical electrically to standard 1N4448.
LL4448
Silicon Epitaxial Planar Switching Diode
Cathode
C
B A
LL-34
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.134
0.142
3.40
3.60
B
0.008
0.016
0.20
0.40
C
0.055
0.059
1.40
1.50
Maximum Ratings (TA=25℃ unless otherwise noted)
Peak Reverse Voltage Reverse Voltage
Parameter
Average Rectified Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature
Storage Temperature Range
Note: 1) Valid provided that electrodes are kept at ambient temperature.
Symbol VRM VR IF(AV) IFSM Ptot Tj Tstg
Value 100 75 150 500 5001) 175
- 65 to + 175
Unit V V mA mA
mW ℃ ℃
Version: 6.1
www.jgdsemi.com
LL4448
Silicon Epitaxial Planar Switching Diode
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter Forward Voltage
at IF = 5 mA at IF = 100 mA Reverse Leakage Current at VR = 20 V at VR = 7.