FQP15N60

FQP15N60/FQPF15N60 600V 15A Super Junction MSFET General Description Product Summary The FQP15N60& FQPF15N60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 63A 0.29Ω 16nC 3.6µJ TO-220 TO-220F Top View D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP15N60/FQB15N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS 15 10 63 2.4 86 173 TC=25°C Power Dissipation B Derate above 25oC PD ...