R SEMICONDUCTOR
SC0806
SILICON CARBIDE SCHOTTKY DIODE Reverse Voltage - 600 Volts
Forward Current - 8.0Amperes
DESCRIP...
R SEMICONDUCTOR
SC0806
SILICON CARBIDE
SCHOTTKY DIODE Reverse Voltage - 600 Volts
Forward Current - 8.0Amperes
DESCRIPTION
SIC
Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operation during surge or over-voltage conditions.
FEATURES
Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery
MECHANICAL DATA
Case: JEDEC TO-22OAC Molding compound meets UL94V-0 flammability rating Terminals: Lead solderable per J-STD-002 and JESD22-B102 Polarity: As marked Mounting Torque: 10 in-Ibs maximum
TYPICAL APPLICATIONS
General Purpose SMPS, Solar inverter, UPS Power Switching Circuits
MAXIMUM RATINGS
(Ratings at 25°C ambient temperature unless otherwise specified ...