A2I35H060GNR1

Freescale Semiconductor Technical Data Document Number: A2I35H060N Rev. 0, 4/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. 3500 MHz  Typical Doherty Single--Carrier W--CDMA Characterization Performance: PVVrDGoDSb2a=Bb2=il8it1yV.3odncV,CdIcDC,QDP1FoA.u=t(1=)5610mWA,AIDvQg.2,AIn=p1u4t 1SimgnAa,lVPGASR1B==9.19.6dBVd@c, 0.01% Frequency 3400 MHz 3500 MHz 3600 MHz Gps (dB) 24.0 24.0 23.7 PAE (%) 32.5 32.4 31.3 ACPR (dBc) –33.4 –37.0 –39.0 Features  Advanced High Performance In--Package Doherty  On--Chip Matching (50 Ohm Input, DC Blocked)  Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)  Designed for Digital Predistortion Error Correction Systems A2I...