AO3401, AO3401L (Lead-Free) P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3401 uses adva...
AO3401, AO3401L (Lead-Free) P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3401L is offered in a lead free package.
Features
VDS (V) = -30V ID = -4.2 A RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V)
Oct 2003
TO-236 (SOT-23) Top View
G D
S
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum -30 ±12 -4.2 -3.5 -30 1.4 1
-55 to 150
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-...