SE6050B

SE6050B N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET  VDS = 60V  RDS(ON) = 11mΩ @ VGS=10V Pin configurations See Diagram below G D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range TO-252 Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 60 ±20 50 220 80 0.53 115 -55 to 175 Units V V A W W/℃ mJ ℃ Typ Max Units - 1.88 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 1. SE6050B Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note...