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SE3035

Sino-IC
Part Number SE3035
Manufacturer Sino-IC
Description N-Channel MOSFET
Published Feb 22, 2019
Detailed Description Apr 2015 SE3035 N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra...
Datasheet PDF File SE3035 PDF File

SE3035
SE3035

Overview
Apr 2015 SE3035 N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 5.
5mΩ @ VGS=10  RDS(ON) = 9.
5mΩ @ VGS=4.
5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 30 ±20 35 120 35 -55 to 150 Units V V A W ℃ ShangHai Si...


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