SE80100

Nov 2014 SE80100 N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 80V  RDS(ON) = 6.8mΩ @ VGS=10 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 80 ±20 100 370 125 -55 to 175 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co., Ltd. 1. SE80100 Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS IDSS IGSS VGS(th) RDS(ON) Drain-Source Breakdown Voltage Drain to Source Leakage Current Gate-Body Leakage C...