SE3080G N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application
Features
For a single MOSFET
VDS = 30V RDS(ON) = 4.5mΩ @ VGS=10V
Pin configurations
See Diagram below
DD 56
DD 78
1 2 34
S ...
