10 Amp Schottky Barrier Rectifier
MBR1020CT THRU MBR1060CT
Features
• Metal of Silicon Rectifier, Majority Carrier Conduction • Halogen Free Available Up...
Description
MBR1020CT THRU MBR1060CT
Features
Metal of Silicon Rectifier, Majority Carrier Conduction Halogen Free Available Upon Request By Adding Suffix "-HF" Low Power Loss High Efficiency High Surge Capacity, High Current Capability Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix Designates
Compliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1
Maximum Ratings
Operating Junction Temperature Range: -55⁰C to +150⁰C Storage Temperature Range: -55⁰C to +175⁰C Thermal Resistance 2.0°C/W Junction to Case Mounting Torgue: 5 in-lbs Maximum
MCC Part Number
Device Marking
Maximum Recurrent Peak Reverse
Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
MBR1020CT MBR1030CT MBR1035CT MBR1040CT MBR1045CT MBR1050CT
MBR1060CT
MBR1020CT MBR1030CT MBR1035CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT
20V 30V 35V 40V 45V
50V 60V
14V 21V 24.5V 28V 31.5V 35V
42V
20V 30V 35V 40V 45V
50V 60V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward Current
IF(AV)
10A
TC=105⁰C
Peak Forward Surge Current
Maximum Forward Voltage Drop Per Element
MBR1020CT- 45CT MBR1050CT- 60CT
MBR1020CT- 45CT MBR1050CT- 60CT
Maximum DC Reverse Current at Rated DC Blocking Voltage
Typical Junction Capacitance
MBR1020CT- 45CT MBR1050CT- 60CT
IFSM VF IR CJ
125A
0.70V 0.80V 0.57V 0.65V 0.1mA 15mA
170pF 220pF
8.3ms,Half Sine
IFM=5A TJ=25⁰C IFM=5A TJ=125⁰C TJ=25⁰C; TJ=125⁰C
Measured at 1.0MHz, VR=4.0V
Note :1. H...
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