SFTN0780

SFTN0780 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Drain Current - Pulsed 1) Power Dissipation Operating Junction Temperature Storage Temperature Range 1) Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol VDS VGS ID IDM Ptot Tj Tstg Symbol RθJC RθJA Value 800 ± 30 7 26.4 48 150 - 55 to + 150 Max. 2.6 62.5 Unit V V A A W ℃ ℃ Unit ℃/W ℃/W SEMTECH ELECTRONICS LTD. ® Dated: 01/04/2016 Rev: 01 SFTN0780 Characteristics at TC = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 250 μA Drain-Source Leakage Current at VDS = 800 V at VDS = 640 V, TC = 125℃ Gate Leakage Current at VGS = ± 30 V Gate-Source Threshold Voltage at VDS = VGS, ...